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CGHV40180F大功率氮化鎵功放200W

根本參數設置

功率：180-250W峰值

頻繁位置：DC-2.0GHz增益控制： 24dB運轉電壓降： 50V打包封裝：Pill丸式、法蘭部

超低價訂貨周期：2-3周

物料詳情價紹價紹

自選芯片封裝表現形式：CGHV40180P CGHV40180F

Product SKU	Recommended For New Design?	Technology	Frequency Min	Frequency Max	Peak Output Power	Gain	Efficiency	Operating Voltage	Form	Package Type
CGHV40180P	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Pill
CGHV40180F-AMP3	Yes	GaN on SiC	0.96 GHz	1.25 GHz	200 W	24 dB	70%	28 V / 50 V	Evaluation Board	Flange
CGHV40180F	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Flange