欧美在线一区二区-亚洲欧美综合-欧美国产一区二区-国产欧美一区二区

貼片電阻

核心指標

貼片電容,很高250瓦，很高26 GHz

API Inmet能帶來了不同Powerfilm ?片式內阻器。這樣外層貼裝電子器件長期于混衰減器和威爾金森瓦數分派器中。貼片內阻的阻值比率從5到300歐姆，有不同尺寸圖和外層清理可供選取。各種規劃，值和頁面設置也可應規定要求能帶來。

品牌內容介紹書

貼片內阻

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
26TPC20-40	1	26	BeO	Thick	X, W, S	G, N, T, H	0.02	0.04	0.01
	60	3	BeO	Thin	X	N, T, H	0.25	0.25	0.06
	20	4	AlN	Thin	X, W, S	N, T, H	0.1	0.2	0.04
ANC200-200	30	4	AlN	Thin	X, S	N, T, H	0.2	0.2	0.04
	40	2.5	AlN	Thin	X, W, S	N, T, H	0.25	0.25	0.04
ANC250-375	150	3	AlN	Thin	X	N, T, H	0.25	0.375	0.04
ANC350-225	100	2	AlN	Thin	X	N, T, H	0.35	0.225	0.04
ANC375-375	200	1	AlN	Thin	X	N, T, H	0.375	0.375	0.04
	10	2.5	AlN	Thin	X, W, S	N, T, H	0.05	0.05	0.01
	5	4	AlN	Thin	X, W, S	N, T, H	0.05	0.05	0.01
KAC100-200A	20	3	AlN	Thick	X, S	N, T, H	0.1	0.2	0.04
KAC250-250A	75	5	AlN	Thick	X, S	N, T, H	0.25	0.25	0.04
KAC250-375A	100	3	AlN	Thick	X, S	N, T, H	0.25	0.375	0.04
KAC60-120A	10	4	AlN	Thick	X, S	N, T, H	0.06	0.12	0.025
	3	18	BeO	TaN	X, W, S	G, N, T, H	0.02	0.04	0.01
	5	12.4	BeO	TaN	X, W, S	G, N, T, H	0.025	0.05	0.01
	25	4	BeO	TaN	X, W, S	G, N, T, H	0.05	0.1	0.01
	8	10	BeO	TaN	X, W, S	G, N, T, H	0.05	0.05	0.01
	50	4	BeO	TaN	X, W, S	G, N, T, H	0.075	0.15	0.01
PC50-50	5	4	Alumina	Thick	X, W, S	N, T, H	0.05	0.05	0.01
	65	4	BeO	Thin	X, W, S	N, T, H	0.1	0.2	0.04
	125	1	BeO	Thin	X	N, T, H	0.25	0.25	0.04
	80	1.5	BeO	Thin	X	N, T, H	0.25	0.25	0.06
	150	1	BeO	Thin	X	N, T, H	0.25	0.375	0.04
	250	1	BeO	Thin	X	N, T, H	0.375	0.375	0.04
	10	8	BeO	Thin	X, S	N, T, H	0.05	0.1	0.04
	10	6	BeO	Thin	X, W, S	N, T, H	0.05	0.1	0.025